Research Outputs

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  • Publication
    Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
    (IEEE, 2005) ;
    Bychikhin, Sergey 
    ;
    Pogany, Dionyz 
    ;
    Marso, Michel 
    ;
    Kordos, Peter 
    ;
    Nicolics, Johann 
    We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.
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