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Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
Publisher
IEEE
Source
In: Electronics technology : meeting the challenges of electronics technology progress, 15-16
Date Issued
2005
Author(s)
Abstract
We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.
Subjects
Aluminum gallium nitride
Electronic packaging thermal management
Gallium nitride
HEMTs
MODFETs
Temperature
Thermal loading
Thermal resistance
Thin film sensors
Thin film transistors
Type
info:eu-repo/semantics/bookPart
Buchbeitrag
Scopus© citations
0
Acquisition Date
Feb 16, 2025
Feb 16, 2025
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Acquisition Date
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