Hanreich, Gernot

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Official Name
Hanreich, Gernot
Main Affiliation
Akademische Titel
Prof.(FH) DI Dr.
Email
gernot.hanreich@fh-burgenland.at
Scopus Author ID
6602807486
Status
staff

Research Outputs

2007 2007 2006 2006 2005 2005 2004 2004 2003 2003 2002 2002 2001 2001 2000 2000 0.0 0.0 0.2 0.2 0.4 0.4 0.6 0.6 0.8 0.8 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0
Now showing 1 - 5 of 5
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    Publication
    Simulationsunterstützte thermische Analyse einer Galliumarsenid-Feldeffekt-Leistungstransistorbaugruppe
    (VDE-Verlag, 2004-02-05)
    Hanreich, Gernot 
    ;
    Mündlein, Martin 
    ;
    Nicolics, Johann 
    ;
    Mayer, Markus 
    Obwohl Galliumarsenid-Transistoren (GaAs) wegen ihrer Hochfrequenztauglichkeit in zahlreichen Breichen der Telekommunikation zur Anwendung kommen, bleibt als Nachteil bei ihrem Einsatz in Leistungsverstärkern die im Vergleich zu Silizium viel kleinere Wärmeleitfähigkeit. Insbesondere die im Pulsbetrieb unvermeidbaren Temperaturunterschiede innerhalb des Gates führen wegen der Temperaturabhängigkeit der elektrischen Eigenschaften zu einem zeitlich veränderlichen nichtlinearen Verhalten der Transistoren während eines Pulses. Die Stärke dieses Phänomens hängt dabei erheblich von montagebedingten Wärmeübergangswiderständen ab. Mit Hilfe eines an unserem Institut speziell für thermische Untersuchungen elektronischer Baugruppen und Bauteile entwickelten Simulationsprogramms (TRESCOM II) wird im Rahmen dieses Beitrages gezeigt, wie eine auf Grund von gegenseitigen Abhängigkeiten komplexe thermische Optimierungsaufgabe mit vergleichsweise geringem Aufwand gelöst werden kann. Ferner werden Wärmeübergangskoeffizienten durch Vergleich gemessener und berechneter Ergebnisse bestimmt, sowie die Grenzen und Unsicherheiten des 'Reverse-Modelings' diskutiert.
      157  1
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    Publication
    Thermal Investigation of GaAs Microwave Power Transistors
    (IMAPS, 2004)
    Hanreich, Gernot 
    ;
    Mayer, Markus 
    ;
    Mündlein, Martin 
    ;
    Nicolics, Johann 
    The lower thermal conductivity of gallium arsenide (GaAs) compared to silicon (Si) requires a careful thermal design for optimizing device performance and reliability. In this paper a recently developed thermal simulation tool (TRESCOM II) is applied for investigating the thermal behavior of a heterojunction GaAs power field effect transistor (FET). Main features of the simulation tool are an easy model creation procedure and an efficient numerical solver. Moreover, the tool allows to consider temperature dependent material properties and temperature dependent boundary conditions. The investigation of the thermal behavior of the power transistor has two goals. First goal is to establish the temperature distribution within the active layer of the FET to allow predictions of thermal-electrical interactions. A deeper insight into thermal-electrical interaction will lead to better equivalent circuit models used in electrical circuit design. Due to the fact that reliability of the component is mainly determined by thermal load and induced thermomechanical stress, second goal of this work is to investigate the influence of chip thickness and die bonding variations on the thermal behavior. Thermal response on different power levels is investigated and the influence of chip thickness tolerances and die bonding on the thermal performance of the device is discussed.
      63  1
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    Publication
    High resolution thermal simulation of electronic components
    (Elsevier, 2000)
    Hanreich, Gernot 
    ;
    Nicolics, Johann 
    ;
    Musiejovsky, Laszlo 
    An efficient thermal management in electronic components is essential to minimize the influence of thermomechanically induced stress and thermal load. Frequently, thermal simulation tools are applied to reduce the number of experiments needed for thermal characterization of the semiconductor components. However, for using commercially available software packages, much effort is necessary for maintenance and for generating the thermal models. Moreover, the limitation of the node number does not allow a discretization sufficiently fine for more complex structures as in high lead count packages. In this paper, a new thermal simulation tool is presented, which allows one to create models in a very efficient way. The developed and implemented solver based on the alternating direction implicit method is efficiently processing the required high node number. Moreover, the developed thermal simulation tool is applied for the thermal characterization of a 176 lead quad flat pack (QFP-package) using a discretization with 320,000 nodes. Steady-state and transient thermal qualities of the package are investigated under boundary conditions as specified by the Joint Electronic Device Engineering Council (JEDEC). Further, results obtained by thermal simulation are compared with those established from experimental procedures. Conclusions of how this new tool can be used for thermal design optimization are derived.
      120  1
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    Publication
    Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
    (IEEE, 2005)
    Hanreich, Gernot 
    ;
    Bychikhin, Sergey 
    ;
    Pogany, Dionyz 
    ;
    Marso, Michel 
    ;
    Kordos, Peter 
    ;
    Nicolics, Johann 
    We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.
      107  1
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    Publication
    Thermal Analysis of Multilayer Printed Circuit Boards with Embedded Carbon Black-Polymer Resistors
    (IEEE, 2007-05)
    Nicolics, Johann 
    ;
    Mündlein, Martin 
    ;
    Hanreich, Gernot 
    ;
    Zluc, A. 
    ;
    Stahr, H. 
    ;
    Franz, M 
      95  1Scopus© Citations 6