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|Title:||In situ vibration measurements on power modules under operating conditions||Other Titles:||2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012; Cascais; Portugal; 16 April 2012 through 18 April 2012; Code 89825||Authors:||Czerny, Bernhard
|Issue Date:||16-Apr-2012||Publisher:||Elsevier||Source:||2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE||Series/Report no.:||2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012;6191724||Abstract:||The subject of this investigation was determination of thermo-mechanically induced displacement of the components inside a power module under operation conditions. It is well known that lifetime of insulated gate bipolar transistor (IGBT) modules is limited by thermo-mechanical fatigue. Wire bonded interconnects inside the IGBTs count as critical sites where crack initiation and failure is observed. In this study the temperature dependent periodic deformation of wire-bonds under operating conditions was determined by using a laser Doppler vibrometer (LDV) and thermal imaging camera. Furthermore finite element analyses (FEA) were conducted to obtain the strain values needed for lifetime assessments.||URI:||https://ieeexplore.ieee.org/document/6191724
|Appears in Collections:||Energie-Umweltmanagement|
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