Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.11790/1659
Title: Simulation of stress concentrations in wire-bonds using a novel strain gradient theory
Other Titles: 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013, Wroclaw, Poland, 14 April 2013 through 17 April 2013, Code 98040
Authors: Czerny, Bernhard 
Lederer, Martin 
Nagl, Bernhard 
Trnka, A. 
Khatibi, Golta 
Thoben, Markus 
Issue Date: 14-Apr-2013
Publisher: Elsevier
Source: 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013
Series/Report no.: 2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2013;6529910
Abstract: Fatigue failure of wire-bonds is one of the key factors limiting the lifetime of power electronic devices. In IGBT (insulated gate bipolar transistor) modules, wire-bonds are exposed to repeated temperature changes leading to thermo-mechanical stresses in the constituent materials. Due to the geometry, stress concentrations arise at the interfaces of aluminum wires and silicon chips. In the framework of classical continuum mechanics, these stress concentrations show the characteristics of stress singularities. Nevertheless, IGBT modules reach lifetimes of about 30 years under service conditions. Therefore, it seems that classical continuum mechanics exaggerates the stress concentrations occurring at the material transitions. Hence, it is the subject of the present investigation to calculate more realistic stress distributions using a novel strain gradient theory.
URI: http://hdl.handle.net/20.500.11790/1659
https://ieeexplore.ieee.org/document/6529910
ISBN: 978-146736138-5
DOI: 10.1109/EuroSimE.2013.6529910
Appears in Collections:Energie-Umweltmanagement

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