Please use this identifier to cite or link to this item:
|Title:||Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors||Authors:||Hanreich, Gernot
|Keywords:||Aluminum gallium nitride;Electronic packaging thermal management;Gallium nitride;HEMTs;MODFETs;Temperature;Thermal loading;Thermal resistance;Thin film sensors;Thin film transistors||Issue Date:||2005||Publisher:||IEEE||Source:||In: Electronics technology : meeting the challenges of electronics technology progress, 15-16||Abstract:||We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.||Description:||28th international seminar on electronics technology, May 19-20, 2005||URI:||http://hdl.handle.net/20.500.11790/154||ISBN:||0-7803-9325-2||DOI:||10.1109/ISSE.2005.1490990||Rights:||info:eu-repo/semantics/closedAccess|
|Appears in Collections:||Energie-Umweltmanagement|
Show full item record
checked on Jul 25, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.