Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.11790/154
Title: Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors
Authors: Hanreich, Gernot 
Bychikhin, Sergey 
Pogany, Dionyz 
Marso, Michel 
Kordos, Peter 
Nicolics, Johann 
Keywords: Aluminum gallium nitride;Electronic packaging thermal management;Gallium nitride;HEMTs;MODFETs;Temperature;Thermal loading;Thermal resistance;Thin film sensors;Thin film transistors
Issue Date: 2005
Publisher: IEEE
Source: In: Electronics technology : meeting the challenges of electronics technology progress, 15-16
Abstract: We study the self-heating effect in a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT) grown on silicon. We determine the HEMT static channel temperature using a dc characterization method and the results are compared with values calculated with a two-dimensional thermal model. No experimental data on the dynamic thermal behavior are available until now. For this reason, the transient thermal response on current pulses in the sub-microsecond range is estimated theoretically by means of a three-dimensional thermal model.
Description: 28th international seminar on electronics technology, May 19-20, 2005
URI: http://hdl.handle.net/20.500.11790/154
ISBN: 0-7803-9325-2
DOI: 10.1109/ISSE.2005.1490990
Rights: info:eu-repo/semantics/closedAccess
Appears in Collections:Energie-Umweltmanagement

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